KP810A Specs and Replacement
Type Designator: KP810A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Ic| ⓘ - Maximum Collector Current: 7 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Package: TO218
KP810A Substitution - IGBT ⓘ Cross-Reference Search
KP810A datasheet
No PDF!
Specs: IXSX35N120AU1, IXSX40N60CD1, IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1, KP730A, KP731A, FGH40N60UFD, KP810B, KP810V, MDI100-12A3, MDI145-12A3, MDI150-12A4, MDI200-12A4, MDI300-12A4, MDI550-12A4
Keywords - KP810A transistor spec
KP810A cross reference
KP810A equivalent finder
KP810A lookup
KP810A substitution
KP810A replacement
History: SKM300GAX123D | IXSX50N60AU1S | MG25Q1BS11 | IGC109T120T6RM | IXSX50N60AU1
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
bc639 equivalent | bd138 transistor equivalent | c1096 transistor | c1345 transistor | jcs640c | kn2907a | ncep028n85 datasheet | sw50n06