MDI150-12A4 Specs and Replacement
Type Designator: MDI150-12A4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 760 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: INT-A-PAK MDI150-12A4 Substitution - IGBT ⓘ Cross-Reference Search
MDI150-12A4 datasheet
mdi150-12a4.pdf
MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IC25 = 180 A IGBT Modules VCES = 1200 V VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA 3 MII MID MDI 2 11 3 3 3 1 10 9 8 8 8 1 1 1 9 9 11 11 2 2 2 10 10 E 72873 Features Symbol Conditions Maximum Ratings NPT IGBT technology low saturation voltage VCES TJ = 25 C to 150 C 1200 V low switching losses VCGR T... See More ⇒
Specs: IXSX50N60BU1, KP730A, KP731A, KP810A, KP810B, KP810V, MDI100-12A3, MDI145-12A3, GT50JR22, MDI200-12A4, MDI300-12A4, MDI550-12A4, MDI75-12A3, MGB15N35CLT4, MGB15N40CL, MGP11N60E, MGP11N60ED
Keywords - MDI150-12A4 transistor spec
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History: MG50J2YS50
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