MDI150-12A4 Datasheet and Replacement
Type Designator: MDI150-12A4
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 760 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: INT-A-PAK
MDI150-12A4 substitution
MDI150-12A4 Datasheet (PDF)
mdi150-12a4.pdf
MII 150-12 A4 MID 150-12 A4MDI 150-12 A4IC25 = 180 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MII MID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR T
Datasheet: IXSX50N60BU1 , KP730A , KP731A , KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , FGD4536 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED .
History: IXGH32N60BU1
Keywords - MDI150-12A4 transistor datasheet
MDI150-12A4 cross reference
MDI150-12A4 equivalent finder
MDI150-12A4 lookup
MDI150-12A4 substitution
MDI150-12A4 replacement
History: IXGH32N60BU1
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