All IGBT. MDI150-12A4 Datasheet

 

MDI150-12A4 Datasheet and Replacement


   Type Designator: MDI150-12A4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 760 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: INT-A-PAK
      - IGBT Cross-Reference

 

MDI150-12A4 Datasheet (PDF)

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MDI150-12A4

MII 150-12 A4 MID 150-12 A4MDI 150-12 A4IC25 = 180 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MII MID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR T

Datasheet: IXSX50N60BU1 , KP730A , KP731A , KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MBQ60T65PES , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED .

History: SKM75GB176D | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | IKW50N65H5 | VS-GT100TP60N | CRG05T60A44S-G

Keywords - MDI150-12A4 transistor datasheet

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