MDI200-12A4 IGBT. Datasheet pdf. Equivalent
Type Designator: MDI200-12A4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: INT-A-PAK
MDI200-12A4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MDI200-12A4 Datasheet (PDF)
mdi200-12a4.pdf
MII 200-12 A4 MID 200-12 A4MDI 200-12 A4IC25 = 270 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MIIMID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR
Datasheet: KP730A , KP731A , KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MBQ60T65PES , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E .
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