All IGBT. MGB15N40CL Datasheet

 

MGB15N40CL Datasheet and Replacement


   Type Designator: MGB15N40CL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 4500 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: D2PAK
      - IGBT Cross-Reference

 

MGB15N40CL Datasheet (PDF)

 ..1. Size:91K  onsemi
 mgp15n40cl mgb15n40cl.pdf pdf_icon

MGB15N40CL

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec

 8.1. Size:99K  1
 mgb15n35clt4 mgp15n35cl.pdf pdf_icon

MGB15N40CL

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350

Datasheet: MDI100-12A3 , MDI145-12A3 , MDI150-12A4 , MDI200-12A4 , MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , RJP30E2DPP-M0 , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U .

History: SGT60U65FD1P7 | 2N6977 | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | KE703A | BSM50GD170DL

Keywords - MGB15N40CL transistor datasheet

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