MGP15N40CL Datasheet and Replacement
Type Designator: MGP15N40CL
Type: IGBT + Built-in Zener Diodes
Marking Code: G15N40CL
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 22 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 4500 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO220
MGP15N40CL Datasheet (PDF)
mgp15n40cl mgb15n40cl.pdf

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec
mgb15n35clt4 mgp15n35cl.pdf

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350
Datasheet: MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , IHW20N120R3 , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E .
History: NCE40ED65VT | MM40G3U65B
Keywords - MGP15N40CL transistor datasheet
MGP15N40CL cross reference
MGP15N40CL equivalent finder
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History: NCE40ED65VT | MM40G3U65B



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