Справочник IGBT. MGP15N40CL

 

MGP15N40CL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MGP15N40CL
   Тип транзистора: IGBT + Built-in Zener Diodes
   Маркировка: G15N40CL
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 440 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 22 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 1.8 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 4500 nS
   Coesⓘ - Выходная емкость, типовая: 100 pF
   Тип корпуса: TO220

 Аналог (замена) для MGP15N40CL

 

 

MGP15N40CL Datasheet (PDF)

 ..1. Size:91K  onsemi
 mgp15n40cl mgb15n40cl.pdf

MGP15N40CL MGP15N40CL

MGP15N40CL,MGB15N40CLPreferred DeviceIgnition IGBT15 Amps, 410 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features15 AMPERESmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary uses410 VOLTS (Clamped)include Ignition, Direct Fuel Injec

 7.1. Size:103K  1
 mgp15n43cl.pdf

MGP15N40CL MGP15N40CL

 8.1. Size:99K  1
 mgb15n35clt4 mgp15n35cl.pdf

MGP15N40CL MGP15N40CL

MGP15N35CL,MGB15N35CL,MGC15N35CLInternally ClampedN-Channel IGBThttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and OverVoltage clampedNCHANNEL IGBTprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and15 A, 350

 8.2. Size:104K  1
 mgp15n38cl.pdf

MGP15N40CL MGP15N40CL

 8.3. Size:125K  motorola
 mgp15n60u.pdf

MGP15N40CL MGP15N40CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DDesigner's Data SheetMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provide

 8.4. Size:120K  motorola
 mgp15n60urev0.pdf

MGP15N40CL MGP15N40CL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGP15N60U/DProduct PreviewMGP15N60UInsulated Gate Bipolar TransistorNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO220termination scheme to provide an enhanced and reliable high15 A @ 90Cvoltageblocking capability. It also provides fast sw

 8.5. Size:250K  onsemi
 mgp15n35cl-d.pdf

MGP15N40CL MGP15N40CL

MGP15N35CL,MGB15N35CLPreferred DeviceIgnition IGBT15 Amps, 350 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped15 AMPERESprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever hig

Другие IGBT... MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , MGP15N35CL , MGP15N38CL , RJP63F3DPP-M0 , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E .

 

 
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