MGP4N60ED Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MGP4N60ED Specs and Replacement

Type Designator: MGP4N60ED

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 62.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 40 pF

Package: TO220

MGP4N60ED Substitution

- IGBT ⓘ Cross-Reference Search

MGP4N60ED datasheet

..1. Size:150K motorola
mgp4n60ed.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60ED/D Designer's Data Sheet MGP4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 220 4.0 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 6.0 A @ 25 C with a soft recovery ultra fast rectifier and uses an a... See More ⇒

6.1. Size:124K motorola
mgp4n60erev0.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP4N60E/D Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 4.0 A @ 90 C voltage blocking capability. Its new 600 V IG... See More ⇒

6.2. Size:125K motorola
mgp4n60e.pdf pdf_icon