MGP7N60E Specs and Replacement
Type Designator: MGP7N60E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 81 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO220
MGP7N60E Substitution - IGBTⓘ Cross-Reference Search
MGP7N60E datasheet
mgp7n60e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60E/D Designer's Data Sheet MGP7N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 7.0 A @ 90 C voltage blocking capability. Its new 600 V IG... See More ⇒
mgp7n60erev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60E/D Designer's Data Sheet MGP7N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 9.0 A @ 90 C voltage blocking capability. Its new 600 V IG... See More ⇒
mgp7n60ed.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60ED/D Designer's Data Sheet MGP7N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 220 7.0 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 10 A @ 25 C with a soft recovery ultra fast rectifier and uses an ad... See More ⇒
Specs: MGP15N60U, MGP20N14CL, MGP20N35CL, MGP20N40CL, MGP20N60U, MGP21N60E, MGP4N60E, MGP4N60ED, IRG7IC28U, MGP7N60ED, MGS05N60D, MGS13002D, MGV12N120D, MGW12N120, MGW12N120D, MGW14N60ED, MGW20N120
Keywords - MGP7N60E transistor spec
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