MGP7N60E - аналоги, параметры транзистора - Справочник транзисторов

MGP7N60E даташит

..1. Size:122K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60E/D Designer's Data Sheet MGP7N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 7.0 A @ 90 C voltage blocking capability. Its new 600 V IG

0.1. Size:122K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60E/D Designer's Data Sheet MGP7N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 9.0 A @ 90 C voltage blocking capability. Its new 600 V IG

0.2. Size:148K motorola
mgp7n60ed.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP7N60ED/D Designer's Data Sheet MGP7N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 220 7.0 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 10 A @ 25 C with a soft recovery ultra fast rectifier and uses an ad

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