MGS13002D Datasheet. Specs and Replacement

Type Designator: MGS13002D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V

|Ic| ⓘ - Maximum Collector Current: 0.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

Coesⓘ - Output Capacitance, typ: 11 pF

Package: TO92L

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MGS13002D datasheet

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MGS13002D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS13002D/D Designer's Data Sheet MGS13002D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT Built In Free... See More ⇒

Specs: MGP20N40CL, MGP20N60U, MGP21N60E, MGP4N60E, MGP4N60ED, MGP7N60E, MGP7N60ED, MGS05N60D, IRG7R313U, MGV12N120D, MGW12N120, MGW12N120D, MGW14N60ED, MGW20N120, MGW20N60D, MGW21N60ED, MGW30N60

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