MGS13002D PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MGS13002D PDF Specs and Replacement

   Type Designator: MGS13002D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic| ⓘ - Maximum Collector Current: 0.5 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Coesⓘ - Output Capacitance, typ: 11 pF
   Package: TO92L

MGS13002D Substitution

- IGBT ⓘ Cross-Reference Search

MGS13002D PDF specs

0.1. Size:135K motorola
mgs13002drev0.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS13002D/D Designer's Data Sheet MGS13002D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT Built In Free... See More ⇒

Specs: MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , MBQ50T65FDSC , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 .