All IGBT. MGS13002D Datasheet


MGS13002D IGBT. Datasheet pdf. Equivalent

Type Designator: MGS13002D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 1W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6V

Maximum Gate-Emitter Voltage |Veg|, V: 15V

Maximum Collector Current |Ic|, A: 0.3A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 21

Maximum Collector Capacity (Cc), pF: 100pF

Package: TO226AE

MGS13002D Transistor Equivalent Substitute - IGBT Cross-Reference Search


MGS13002D Datasheet (PDF)

1.1. mgs13002drev0.pdf Size:135K _motorola


MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS13002D/D Designer's? Data Sheet MGS13002D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT • Built–In Free Wheeling Diode

Datasheet: MGP20N40CL , MGP20N60U , MGP21N60E , MGP4N60E , MGP4N60ED , MGP7N60E , MGP7N60ED , MGS05N60D , IGW30N100T , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 .

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