MGW20N60D IGBT. Datasheet pdf. Equivalent

   Type Designator: MGW20N60D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 142 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 61 nS
   Coesⓘ - Output Capacitance, typ: 165 pF
   Qgⓘ - Total Gate Charge, typ: 74 nC
   Package: TO247

MGW20N60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

MGW20N60D Datasheet (PDF)

..1. Size:209K motorola
mgw20n60d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N60D/DDesigner's Data SheetMGW20N60DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO24720 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged32 A @ 25Cwith a soft recovery ultrafas

6.1. Size:246K motorola
mgw20n60.pdf

8.1. Size:231K motorola
mgw20n120.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGW20N120/DDesigner's Data SheetMGW20N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO247termination scheme to provide an enhanced and reliable high20 A @ 90Cvoltageblocking

Datasheet: MGP7N60ED , MGS05N60D , MGS13002D , MGV12N120D , MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , TGAN60N60F2DS , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 .

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MGW20N60D IGBT. Datasheet pdf. Equivalent

MGW20N60D Datasheet (PDF)

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AllTransistors(C)2015