All IGBT. MGY25N120 Datasheet

 

MGY25N120 Datasheet and Replacement


   Type Designator: MGY25N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 212 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.37 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 124 nS
   Coesⓘ - Output Capacitance, typ: 181 pF
   Qgⓘ - Total Gate Charge, typ: 97 nC
   Package: TO264
      - IGBT Cross-Reference

 

MGY25N120 Datasheet (PDF)

 ..1. Size:195K  motorola
mgy25n120.pdf pdf_icon

MGY25N120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120/DDesigner's Data SheetMGY25N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO264termination scheme to provide an enhanced and reliable high25 A @ 90Cvoltageblocking

 0.1. Size:218K  motorola
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MGY25N120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120D/DDesigner's Data SheetMGY25N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26425 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged38 A @ 25Cwith a soft recovery ultraf

 6.1. Size:256K  motorola
mgy25n12d.pdf pdf_icon

MGY25N120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120D/DDesigner's Data SheetMGY25N120DInsulated Gate Bipolar TransistorMotorola Preferred Devicewith Anti-Parallel DiodeNChannel EnhancementMode Silicon GateIGBT & DIODE IN TO26425 A @ 90CThis Insulated Gate Bipolar Transistor (IGBT) is copackaged38 A @ 25Cwith a soft recovery ultraf

 6.2. Size:228K  motorola
mgy25n12.pdf pdf_icon

MGY25N120

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGY25N120/DDesigner's Data SheetMGY25N120Insulated Gate Bipolar TransistorMotorola Preferred DeviceNChannel EnhancementMode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advancedIGBT IN TO264termination scheme to provide an enhanced and reliable high25 A @ 90Cvoltageblocking

Datasheet: MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , CRG15T120BNR3S , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 .

History: IXGN72N60C3H1 | IXGT15N120BD1 | STGB30H60DF | 1MBI400HH-120L-50 | IRGPS46160D | GT8N101 | IXGH32N60AU1S

Keywords - MGY25N120 transistor datasheet

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