MGY25N120 - аналоги, основные параметры, даташиты
Наименование: MGY25N120
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 212 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 38 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.37 V @25℃
tr ⓘ - Время нарастания типовое: 124 nS
Coesⓘ - Выходная емкость, типовая: 181 pF
Тип корпуса: TO264
Аналог (замена) для MGY25N120
- подбор ⓘ IGBT транзистора по параметрам
MGY25N120 даташит
mgy25n120.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking
mgy25n120d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f
mgy25n12d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate IGBT & DIODE IN TO 264 25 A @ 90 C This Insulated Gate Bipolar Transistor (IGBT) is co packaged 38 A @ 25 C with a soft recovery ultra f
mgy25n12.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 264 termination scheme to provide an enhanced and reliable high 25 A @ 90 C voltage blocking
Другие IGBT... MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , IRGP4086 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 .
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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