Справочник IGBT. MGY25N120

 

MGY25N120 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: MGY25N120

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Максимальный постоянный ток коллектора (Ic): 25A

Максимальная температура перехода (Tj): 150

Аналог (замена) для MGY25N120

 

 

MGY25N120 Datasheet (PDF)

1.1. mgy25n120d.pdf Size:218K _motorola

MGY25N120
MGY25N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's? Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO264 25 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 38 A @ 25C with a soft recovery ultrafast rectifier and

1.2. mgy25n120.pdf Size:195K _motorola

MGY25N120
MGY25N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's? Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO264 termination scheme to provide an enhanced and reliable high 25 A @ 90C voltageblocking capability. Sh

 2.1. mgy25n12d.pdf Size:256K _motorola

MGY25N120
MGY25N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120D/D Designer's? Data Sheet MGY25N120D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode NChannel EnhancementMode Silicon Gate IGBT & DIODE IN TO264 25 A @ 90C This Insulated Gate Bipolar Transistor (IGBT) is copackaged 38 A @ 25C with a soft recovery ultrafast rectifier and

2.2. mgy25n12.pdf Size:228K _motorola

MGY25N120
MGY25N120

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGY25N120/D Designer's? Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO264 termination scheme to provide an enhanced and reliable high 25 A @ 90C voltageblocking capability. Sh

Другие IGBT... MGW12N120 , MGW12N120D , MGW14N60ED , MGW20N120 , MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , IRG4PC40U , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 .

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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