MID150-12A4 Datasheet and Replacement
Type Designator: MID150-12A4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 760 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: MODULE
MID150-12A4 substitution
MID150-12A4 Datasheet (PDF)
mid150-12a4.pdf
MII 150-12 A4 MID 150-12 A4MDI 150-12 A4IC25 = 180 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MII MID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR T
Datasheet: MGW20N60D , MGW21N60ED , MGW30N60 , MGY20N120D , MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , IKW50N60T , MID200-12A4 , MID300-12A4 , MID550-12A4 , MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A .
History: IXGH17N100U1 | HGT1S3N60B3
Keywords - MID150-12A4 transistor datasheet
MID150-12A4 cross reference
MID150-12A4 equivalent finder
MID150-12A4 lookup
MID150-12A4 substitution
MID150-12A4 replacement
History: IXGH17N100U1 | HGT1S3N60B3
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