MID75-12A3 Specs and Replacement
Type Designator: MID75-12A3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 190 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: MODULE MID75-12A3 Substitution - IGBT ⓘ Cross-Reference Search
MID75-12A3 datasheet
mid75-12a3.pdf
MID75-12A3 VCES = 1200V IGBT (NPT) Module I= 90 A C25 VCE(sat) = 2.2V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside isolated 1 3 4 5 2 Features / Advantages Applications Package Y4 NPT IGBT technology AC motor drives Isolation Voltage V 3600 low saturation voltage Solar inverter Industry standard outline low switching lo... See More ⇒
Specs: MGY25N120 , MGY25N120D , MID100-12A3 , MID145-12A3 , MID150-12A4 , MID200-12A4 , MID300-12A4 , MID550-12A4 , CRG40T60AK3HD , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , MSAGZ52F120A .
Keywords - MID75-12A3 transistor spec
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