MSAGZ52F120A Datasheet and Replacement
Type Designator: MSAGZ52F120A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 52 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 95 nS
Coesⓘ - Output Capacitance, typ: 2200pF pF
Package: SMD-P
- IGBT Cross-Reference
MSAGZ52F120A Datasheet (PDF)
msagz52f120a.pdf

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava
Datasheet: MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , TGD30N40P , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 .
History: APT40GP60BG | IXGT20N120B
Keywords - MSAGZ52F120A transistor datasheet
MSAGZ52F120A cross reference
MSAGZ52F120A equivalent finder
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History: APT40GP60BG | IXGT20N120B



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