All IGBT. MSAGZ52F120A Datasheet

 

MSAGZ52F120A Datasheet and Replacement


   Type Designator: MSAGZ52F120A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 52 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 95 nS
   Coesⓘ - Output Capacitance, typ: 2200pF pF
   Qg ⓘ - Total Gate Charge, typ: 160 nC
   Package: SMD-P
 

 MSAGZ52F120A substitution

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MSAGZ52F120A Datasheet (PDF)

 ..1. Size:35K  microsemi
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MSAGZ52F120A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

Datasheet: MID75-12A3 , MMG05N60D , MSAGX60F60A , MSAGX60F60B , MSAGX75F60A , MSAGX75F60B , MSAGX75L60A , MSAGX75L60B , YGW40N65F1 , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 .

Keywords - MSAGZ52F120A transistor datasheet

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