MSAHZ52F120B Datasheet and Replacement
Type Designator: MSAHZ52F120B
Type: IGBT
Type of IGBT Channel: P
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 52 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 95 nS
Coesⓘ - Output Capacitance, typ: 2200pF pF
Package: SMD-P
MSAHZ52F120B substitution
MSAHZ52F120B Datasheet (PDF)
msahz52f120a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava
Datasheet: MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , FGH75T65UPD , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A .
History: HGT5A40N60A4D
Keywords - MSAHZ52F120B transistor datasheet
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History: HGT5A40N60A4D
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