All IGBT. MSAHZ52F120B Datasheet

 

MSAHZ52F120B Datasheet and Replacement


   Type Designator: MSAHZ52F120B
   Type: IGBT
   Type of IGBT Channel: P
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 52 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 95 nS
   Coesⓘ - Output Capacitance, typ: 2200pF pF
   Package: SMD-P
      - IGBT Cross-Reference

 

MSAHZ52F120B Datasheet (PDF)

 3.1. Size:35K  microsemi
 msahz52f120a.pdf pdf_icon

MSAHZ52F120B

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

Datasheet: MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , GT30F132 , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A .

History: APT68GA60S | APT11GP60K | APT100GT60JRDL | PPNGZ52F120A | HGTG5N120BND | IHW20N120R5 | IRG4RC10S

Keywords - MSAHZ52F120B transistor datasheet

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