MSAHZ52F120B PDF and Equivalents Search

 

MSAHZ52F120B Specs and Replacement

Type Designator: MSAHZ52F120B

Type: IGBT

Type of IGBT Channel: P

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 52 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 95 nS

Coesⓘ - Output Capacitance, typ: 2200pF pF

Package: SMD-P

 MSAHZ52F120B Substitution

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MSAHZ52F120B datasheet

 3.1. Size:35K  microsemi
 msahz52f120a.pdf pdf_icon

MSAHZ52F120B

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAGZ52F120A FAX (714) 966-5256 MSAHZ52F120A Features 1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof 52 Amps Hermetically sealed, surface mount power package Low package inductance 3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava... See More ⇒

Specs: MSAGX75L60B , MSAGZ52F120A , MSAGZ52F120B , MSAHX60F60A , MSAHX60F60B , MSAHX75L60C , MSAHX75L60D , MSAHZ52F120A , IRG4PC50W , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A .

Keywords - MSAHZ52F120B transistor spec

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