NTE3323 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

NTE3323 Specs and Replacement

   Type Designator: NTE3323
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 25 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: TO3P

NTE3323 Substitution

- IGBT ⓘ Cross-Reference Search

NTE3323 datasheet

..1. Size:45K no
nte3323.pdf pdf_icon

NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

8.1. Size:58K 1
nte3321.pdf pdf_icon

NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3P Type Package Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching Absolute Maximum Ratings (TA = +25_C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

8.2. Size:69K no
nte3322.pdf pdf_icon

NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3PBL Features D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . ... See More ⇒

8.3. Size:43K no
nte3320.pdf pdf_icon

NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

Specs: MSAHX75L60D , MSAHZ52F120A , MSAHZ52F120B , NTE3311 , NTE3312 , NTE3320 , NTE3321 , NTE3322 , NGTB75N65FL2 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A .