PPNHZ52F120B PDF and Equivalents Search

 

PPNHZ52F120B Specs and Replacement

Type Designator: PPNHZ52F120B

Type: IGBT

Type of IGBT Channel: P

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 52 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 110 nS

Coesⓘ - Output Capacitance, typ: 2200pF pF

Package: TO258

 PPNHZ52F120B Substitution

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PPNHZ52F120B datasheet

 3.1. Size:88K  microsemi
 ppnhz52f120a.pdf pdf_icon

PPNHZ52F120B

7516 Central Industrial Drive PPC INC. Riviera Beach, FL 33404 PH 561-842-0305 PPNGZ52F120A Fax 561-845-7813 PPNHZ52F120A Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance TO-258 Reverse polarity available upon request PPNH(G)Z52F120... See More ⇒

Specs: NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , SGT40N60FD2PT , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 .

Keywords - PPNHZ52F120B transistor spec

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