All IGBT. PPNHZ52F120B Datasheet

 

PPNHZ52F120B Datasheet and Replacement


   Type Designator: PPNHZ52F120B
   Type: IGBT
   Type of IGBT Channel: P
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 52 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 110 nS
   Coesⓘ - Output Capacitance, typ: 2200pF pF
   Package: TO258
 

 PPNHZ52F120B substitution

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PPNHZ52F120B Datasheet (PDF)

 3.1. Size:88K  microsemi
 ppnhz52f120a.pdf pdf_icon

PPNHZ52F120B

7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120

Datasheet: NTE3320 , NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , RJH60F7BDPQ-A0 , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 .

Keywords - PPNHZ52F120B transistor datasheet

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