RCH10N35 Specs and Replacement
Type Designator: RCH10N35
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 350 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO218
RCH10N35 Substitution - IGBT ⓘ Cross-Reference Search
RCH10N35 datasheet
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Specs: NTE3321 , NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , STGW60V60DF , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A .
History: PPNHZ52F120A
Keywords - RCH10N35 transistor spec
RCH10N35 cross reference
RCH10N35 equivalent finder
RCH10N35 lookup
RCH10N35 substitution
RCH10N35 replacement
History: PPNHZ52F120A
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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