RCH10N40 Datasheet and Replacement
Type Designator: RCH10N40
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO218
- IGBT Cross-Reference
RCH10N40 Datasheet (PDF)
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Datasheet: NTE3322 , NTE3323 , P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , XNF15N60T , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF .
History: RJH60D2DPE | RCM10N35 | APT100GT60JRDL | APT11GP60BDQB | IRG4PC30K | MSAHZ52F120B | APT60GT60SRG
Keywords - RCH10N40 transistor datasheet
RCH10N40 cross reference
RCH10N40 equivalent finder
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History: RJH60D2DPE | RCM10N35 | APT100GT60JRDL | APT11GP60BDQB | IRG4PC30K | MSAHZ52F120B | APT60GT60SRG



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