RCM10N35 Datasheet. Specs and Replacement

Type Designator: RCM10N35  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 350 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 800pF pF

Package: TO204

  📄📄 Copy 

 RCM10N35 Substitution

- IGBTⓘ Cross-Reference Search

 

RCM10N35 datasheet

No PDF!

Specs: P12N60C3, PPNGZ52F120A, PPNGZ52F120B, PPNHZ52F120A, PPNHZ52F120B, RCH10N35, RCH10N40, RCH10N40A, RJH60F7BDPQ-A0, RCM10N40, RCM10N40A, RCP10N35, RCP10N40, RCP10N40A, OST50N65H4EWF, SGF15N90D, SGF30N60RUF

Keywords - RCM10N35 transistor spec

 RCM10N35 cross reference
 RCM10N35 equivalent finder
 RCM10N35 lookup
 RCM10N35 substitution
 RCM10N35 replacement