RCM10N35 Datasheet and Replacement
Type Designator: RCM10N35
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 350 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO204
- IGBT Cross-Reference
RCM10N35 Datasheet (PDF)
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Datasheet: P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , IRG4PC40W , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF .
History: APT11GP60BDQB | MSAHZ52F120B | APT100GT60JRDL | APT68GA60S | IRG4RC10S | APT11GP60K | IRG4PC30K
Keywords - RCM10N35 transistor datasheet
RCM10N35 cross reference
RCM10N35 equivalent finder
RCM10N35 lookup
RCM10N35 substitution
RCM10N35 replacement
History: APT11GP60BDQB | MSAHZ52F120B | APT100GT60JRDL | APT68GA60S | IRG4RC10S | APT11GP60K | IRG4PC30K



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