RCM10N35 Datasheet and Replacement
Type Designator: RCM10N35
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 350 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO204
RCM10N35 substitution
RCM10N35 Datasheet (PDF)
No PDF!
Datasheet: P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , XNF15N60T , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF .
Keywords - RCM10N35 transistor datasheet
RCM10N35 cross reference
RCM10N35 equivalent finder
RCM10N35 lookup
RCM10N35 substitution
RCM10N35 replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
5n50 mosfet equivalent | a1016 transistor | a1693 transistor | a933 datasheet | c535 transistor | irf3205 reemplazo | mpsu06 | кт630