RCM10N35 PDF and Equivalents Search

 

RCM10N35 Specs and Replacement

Type Designator: RCM10N35

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 350 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 800pF pF

Package: TO204

 RCM10N35 Substitution

- IGBT ⓘ Cross-Reference Search

 

RCM10N35 datasheet

No PDF!

Specs: P12N60C3 , PPNGZ52F120A , PPNGZ52F120B , PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , CRG75T65AK5HD , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF .

Keywords - RCM10N35 transistor spec

 RCM10N35 cross reference
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