RCP10N35 Datasheet and Replacement
Type Designator: RCP10N35
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 350 V
|Ic|ⓘ - Maximum Collector Current: 5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800pF pF
Package: TO220
- IGBT Cross-Reference
RCP10N35 Datasheet (PDF)
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Datasheet: PPNHZ52F120A , PPNHZ52F120B , RCH10N35 , RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , SGT60U65FD1PT , RCP10N40 , RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD .
History: 6MBI100VW-120-50 | IXBL20N300C
Keywords - RCP10N35 transistor datasheet
RCP10N35 cross reference
RCP10N35 equivalent finder
RCP10N35 lookup
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History: 6MBI100VW-120-50 | IXBL20N300C
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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