OST50N65H4EWF PDF and Equivalents Search

 

OST50N65H4EWF Specs and Replacement

Type Designator: OST50N65H4EWF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 88 nS

Coesⓘ - Output Capacitance, typ: 194 pF

Package: TO247-4L

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OST50N65H4EWF datasheet

 ..1. Size:755K  oriental semi
ost50n65h4ewf.pdf pdf_icon

OST50N65H4EWF

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 5.1. Size:732K  oriental semi
ost50n65hmf.pdf pdf_icon

OST50N65H4EWF

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog... See More ⇒

 5.2. Size:535K  oriental semi
ost50n65hf-d.pdf pdf_icon

OST50N65H4EWF

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol... See More ⇒

 5.3. Size:756K  oriental semi
ost50n65hewf.pdf pdf_icon

OST50N65H4EWF

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Specs: RCH10N40 , RCH10N40A , RCM10N35 , RCM10N40 , RCM10N40A , RCP10N35 , RCP10N40 , RCP10N40A , XNF15N60T , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , SGF80N60UF , SGF80N60UFD .

Keywords - OST50N65H4EWF transistor spec

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