OST50N65H4EWF Datasheet and Replacement
Type Designator: OST50N65H4EWF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 375
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 80
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.4
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5
V
Tjⓘ -
Maximum Junction Temperature: 175
℃
trⓘ - Rise Time, typ: 88
nS
Coesⓘ - Output Capacitance, typ: 194
pF
Qgⓘ -
Total Gate Charge, typ: 104
nC
Package:
TO247-4L
- IGBT Cross-Reference
OST50N65H4EWF Datasheet (PDF)
5.1. Size:732K oriental semi
ost50n65hmf.pdf 

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.2. Size:535K oriental semi
ost50n65hf-d.pdf 

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.4. Size:747K oriental semi
ost50n65hszf.pdf 

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.5. Size:765K oriental semi
ost50n65hm2f.pdf 

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.6. Size:752K oriental semi
ost50n65hsnf.pdf 

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
5.7. Size:617K oriental semi
ost50n65hzf.pdf 

OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
5.8. Size:698K oriental semi
ost50n65hf.pdf 

OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology
5.9. Size:745K oriental semi
ost50n65hxf.pdf 

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Datasheet: RCH10N40
, RCH10N40A
, RCM10N35
, RCM10N40
, RCM10N40A
, RCP10N35
, RCP10N40
, RCP10N40A
, IRG4PH50UD
, SGF15N90D
, SGF30N60RUF
, SGF30N60RUFD
, SGF40N60UF
, SGF40N60UFD
, SGF5N150UF
, SGF80N60UF
, SGF80N60UFD
.
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