SGF80N60UF PDF and Equivalents Search

 

SGF80N60UF Specs and Replacement

Type Designator: SGF80N60UF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 110 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 350 pF

Package: TO3PF

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SGF80N60UF datasheet

 ..1. Size:567K  fairchild semi
 sgf80n60uf.pdf pdf_icon

SGF80N60UF

October 2001 IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 40A UF series is designed for the applications such as motor High Input Impedance control and general inverters where High ... See More ⇒

 0.1. Size:192K  1
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SGF80N60UF

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Specs: RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , IRGB20B60PD1 , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD .

Keywords - SGF80N60UF transistor spec

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