SGF80N60UF Datasheet and Replacement
Type Designator: SGF80N60UF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 110 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 350 pF
Package: TO3PF
- IGBT Cross-Reference
SGF80N60UF Datasheet (PDF)
sgf80n60uf.pdf
October 2001 IGBTSGF80N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40AUF series is designed for the applications such as motor High Input Impedancecontrol and general inverters where High
Datasheet: RCP10N40A , OST50N65H4EWF , SGF15N90D , SGF30N60RUF , SGF30N60RUFD , SGF40N60UF , SGF40N60UFD , SGF5N150UF , RJH60F7BDPQ-A0 , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD .
History: NGTB20N120IHL | 7MBP100VDA060-50 | BSM50GP60 | APT50GN120B2G | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
Keywords - SGF80N60UF transistor datasheet
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History: NGTB20N120IHL | 7MBP100VDA060-50 | BSM50GP60 | APT50GN120B2G | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
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