SGH13N60UFD Datasheet. Specs and Replacement

Type Designator: SGH13N60UFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 13 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 63 pF

Package: TO3P

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SGH13N60UFD datasheet

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SGH13N60UFD

N-CHANNEL IGBT SGH13N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Charact... See More ⇒

Specs: SGF40N60UF, SGF40N60UFD, SGF5N150UF, SGF80N60UF, SGF80N60UFD, SGH10N120RUF, SGH10N120RUFD, SGH10N60RUFD, IKW40N120H3, SGH15N120RUF, SGH15N120RUFD, SGH15N60RUFD, SGH20N120RUF, SGH20N120RUFD, SGH20N60RUFD, SGH23N60UFD, SGH25N120RUF

Keywords - SGH13N60UFD transistor spec

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