All IGBT. SGH20N120RUFD Datasheet

 

SGH20N120RUFD IGBT. Datasheet pdf. Equivalent


   Type Designator: SGH20N120RUFD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO3P

 SGH20N120RUFD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGH20N120RUFD Datasheet (PDF)

 ..1. Size:596K  fairchild semi
 sgh20n120rufd.pdf

SGH20N120RUFD SGH20N120RUFD

September 2000 IGBTSGH20N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V

 2.1. Size:536K  1
 sgh20n120ruf.pdf

SGH20N120RUFD SGH20N120RUFD

IGBTSGH20N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) RUF series provides low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUF series Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20Ais

 8.1. Size:632K  fairchild semi
 sgh20n60rufd.pdf

SGH20N120RUFD SGH20N120RUFD

September 2000 IGBTSGH20N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @

 8.2. Size:270K  samsung
 sgh20n60rufd.pdf

SGH20N120RUFD SGH20N120RUFD

CO-PAK IGBT SGH20N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 50nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

Datasheet: SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , FGH40N60UFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF .

 

 
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