SGH20N120RUFD datasheet, аналоги, основные параметры

Наименование: SGH20N120RUFD  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 230 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 32 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.3 V @25℃

tr ⓘ - Время нарастания типовое: 60 nS

Coesⓘ - Выходная емкость, типовая: 170 pF

Тип корпуса: TO3P

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 Аналог (замена) для SGH20N120RUFD

- подбор ⓘ IGBT транзистора по параметрам

 

SGH20N120RUFD даташит

 ..1. Size:596K  fairchild semi
 sgh20n120rufd.pdf pdf_icon

SGH20N120RUFD

September 2000 IGBT SGH20N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V

 2.1. Size:536K  1
 sgh20n120ruf.pdf pdf_icon

SGH20N120RUFD

IGBT SGH20N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) RUF series provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUF series Low saturation voltage VCE(sat) = 2.3 V @ IC = 20A is

 8.1. Size:632K  fairchild semi
 sgh20n60rufd.pdf pdf_icon

SGH20N120RUFD

September 2000 IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @

 8.2. Size:270K  samsung
 sgh20n60rufd.pdf pdf_icon

SGH20N120RUFD

CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

ПОКАЗАТЬ ЕЩЁ

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