SGH20N60RUFD Datasheet. Specs and Replacement

Type Designator: SGH20N60RUFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 195 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 49 nS

Coesⓘ - Output Capacitance, typ: 254 pF

Package: TO3P

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SGH20N60RUFD datasheet

 ..1. Size:632K  fairchild semi
 sgh20n60rufd.pdf pdf_icon

SGH20N60RUFD

September 2000 IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @ ... See More ⇒

 ..2. Size:270K  samsung
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SGH20N60RUFD

CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS ... See More ⇒

 8.1. Size:536K  1
 sgh20n120ruf.pdf pdf_icon

SGH20N60RUFD

IGBT SGH20N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) RUF series provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUF series Low saturation voltage VCE(sat) = 2.3 V @ IC = 20A is... See More ⇒

 8.2. Size:596K  fairchild semi
 sgh20n120rufd.pdf pdf_icon

SGH20N60RUFD

September 2000 IGBT SGH20N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V ... See More ⇒

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Specs: SGH10N120RUFD, SGH10N60RUFD, SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD, SGH15N60RUFD, SGH20N120RUF, SGH20N120RUFD, MBQ60T65PES, SGH23N60UFD, SGH25N120RUF, SGH30N60RUF, SGH30N60RUFD, SGH40N60UF, SGH40N60UFD, SGH5N120RUF, SGH5N120RUFD

Keywords - SGH20N60RUFD transistor spec

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