SGH20N60RUFD - аналоги, параметры транзистора

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..1. Size:632K fairchild semi
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September 2000 IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @

..2. Size:270K samsung
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CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

8.1. Size:536K 1
sgh20n120ruf.pdf pdf_icon

IGBT SGH20N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) RUF series provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUF series Low saturation voltage VCE(sat) = 2.3 V @ IC = 20A is

8.2. Size:596K fairchild semi
sgh20n120rufd.pdf pdf_icon

September 2000 IGBT SGH20N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V

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