Справочник IGBT. SGH20N60RUFD

 

SGH20N60RUFD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SGH20N60RUFD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 195 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 32 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 8.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 49 nS
   Coesⓘ - Выходная емкость, типовая: 254 pF
   Qgⓘ - Общий заряд затвора, typ: 55 nC
   Тип корпуса: TO3P

 Аналог (замена) для SGH20N60RUFD

 

 

SGH20N60RUFD Datasheet (PDF)

 ..1. Size:632K  fairchild semi
 sgh20n60rufd.pdf

SGH20N60RUFD SGH20N60RUFD

September 2000 IGBTSGH20N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @

 ..2. Size:270K  samsung
 sgh20n60rufd.pdf

SGH20N60RUFD SGH20N60RUFD

CO-PAK IGBT SGH20N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 50nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

 8.1. Size:536K  1
 sgh20n120ruf.pdf

SGH20N60RUFD SGH20N60RUFD

IGBTSGH20N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) RUF series provides low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUF series Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20Ais

 8.2. Size:596K  fairchild semi
 sgh20n120rufd.pdf

SGH20N60RUFD SGH20N60RUFD

September 2000 IGBTSGH20N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V

Другие IGBT... SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , FGH40N60SFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD .

 

 
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