SGL25N120RUFD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGL25N120RUFD Specs and Replacement

Type Designator: SGL25N120RUFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: TO264

SGL25N120RUFD Substitution

- IGBT ⓘ Cross-Reference Search

SGL25N120RUFD datasheet

..1. Size:567K fairchild semi
sgl25n120rufd.pdf pdf_icon

IGBT SGL25N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10 s @ TC = 100 C, VGE = 15V Transistors (IGBTs) provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.3 V @ IC = 25A series is designe... See More ⇒

Specs: SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , BT40T60ANF , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF .