All IGBT. SGL25N120RUFD Datasheet

 

SGL25N120RUFD Datasheet and Replacement


   Type Designator: SGL25N120RUFD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO264
      - IGBT Cross-Reference

 

SGL25N120RUFD Datasheet (PDF)

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SGL25N120RUFD

IGBTSGL25N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10s @ TC = 100C, VGE = 15VTransistors (IGBTs) provides low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.3 V @ IC = 25Aseries is designe

Datasheet: SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , RJP63F3DPP-M0 , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF .

History: IRGC16B60KB

Keywords - SGL25N120RUFD transistor datasheet

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