SGL25N120RUFD Datasheet. Specs and Replacement

Type Designator: SGL25N120RUFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: TO264

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SGL25N120RUFD datasheet

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SGL25N120RUFD

IGBT SGL25N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10 s @ TC = 100 C, VGE = 15V Transistors (IGBTs) provides low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.3 V @ IC = 25A series is designe... See More ⇒

Specs: SGH5N120RUFD, SGH80N60UF, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, SGL160N60UFD, SGL20N60RUFD, YGW40N65F1, SGL30N60RUFD, SGL40N150, SGL40N150D, SGL50N60RUFD, SGL5N60RUFD, SGL60N90D, SGL60N90DG3, SGP10N60RUF

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