SGL30N60RUFD Datasheet and Replacement
Type Designator: SGL30N60RUFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 48 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 304 pF
Qg ⓘ - Total Gate Charge, typ: 122 nC
Package: TO264
SGL30N60RUFD substitution
SGL30N60RUFD Datasheet (PDF)
Datasheet: SGH80N60UF , SGH80N60UFD , SGI25N40 , SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , GT30F126 , SGL40N150 , SGL40N150D , SGL50N60RUFD , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF .
History: FGW50N60H
Keywords - SGL30N60RUFD transistor datasheet
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History: FGW50N60H
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