SGL30N60RUFD Datasheet. Specs and Replacement

Type Designator: SGL30N60RUFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 304 pF

Package: TO264

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SGL30N60RUFD datasheet

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SGL30N60RUFD

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Specs: SGH80N60UF, SGH80N60UFD, SGI25N40, SGL10N60RUFD, SGL15N60RUFD, SGL160N60UFD, SGL20N60RUFD, SGL25N120RUFD, SGT40N60NPFDPN, SGL40N150, SGL40N150D, SGL50N60RUFD, SGL5N60RUFD, SGL60N90D, SGL60N90DG3, SGP10N60RUF, SGP13N60UF

Keywords - SGL30N60RUFD transistor spec

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