SGS13N60UF Specs and Replacement
Type Designator: SGS13N60UF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 45 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 13 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 63 pF
Package: TO220F
SGS13N60UF Substitution - IGBT ⓘ Cross-Reference Search
SGS13N60UF datasheet
sgs13n60uf.pdf
April 2001 IGBT SGS13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UF series is designed for applications such as motor High input impedance control and general inverters where ... See More ⇒
sgs13n60ufd.pdf
April 2001 IGBT SGS13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UFD series is designed for applications such as motor High input impedance control and general inverters whe... See More ⇒
Specs: SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGH80N60UFD , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L .
History: NCE75TD120VTP | KGF30N135NDH | GT50J121
Keywords - SGS13N60UF transistor spec
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History: NCE75TD120VTP | KGF30N135NDH | GT50J121
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