SGS23N60UF Specs and Replacement
Type Designator: SGS23N60UF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 73 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 23 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO220F
SGS23N60UF Substitution - IGBT ⓘ Cross-Reference Search
SGS23N60UF datasheet
sgs23n60uf.pdf
April 2001 IGBT SGS23N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 12A The UF series is designed for applications such as motor High input impedance control and general inverters where h... See More ⇒
sgs23n60ufd.pdf
April 2001 IGBT SGS23N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 12A The UFD series is designed for applications such as motor High input impedance control and general inverters wher... See More ⇒
Specs: SGR20N40L , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , YGW40N65F1 , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L .
History: STGP35HF60W | MMIX1Y82N120C3H1 | STGF15M65DF2 | IKW50N65H5 | STGB3HF60HD | SKW10N60A | STGP30H60DF
Keywords - SGS23N60UF transistor spec
SGS23N60UF cross reference
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History: STGP35HF60W | MMIX1Y82N120C3H1 | STGF15M65DF2 | IKW50N65H5 | STGB3HF60HD | SKW10N60A | STGP30H60DF
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