SGU1N60XFD Specs and Replacement
Type Designator: SGU1N60XFD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 20 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
|Ic| ⓘ - Maximum Collector Current: 1 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 12 pF
Package: IPAK
SGU1N60XFD Substitution - IGBT ⓘ Cross-Reference Search
SGU1N60XFD datasheet
Specs: SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , IRG4PC50U , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD .
History: TGAN80N60F2DS | STGB18N40LZ | T1200TB25A | NGTB30N60FLWG | TGAN40N65F2DS | RJH60D7BDPQ-E0
Keywords - SGU1N60XFD transistor spec
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History: TGAN80N60F2DS | STGB18N40LZ | T1200TB25A | NGTB30N60FLWG | TGAN40N65F2DS | RJH60D7BDPQ-E0
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