All IGBT. SGW13N60UF Datasheet

 

SGW13N60UF Datasheet and Replacement


   Type Designator: SGW13N60UF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Package: TO263
 

 SGW13N60UF substitution

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SGW13N60UF Datasheet (PDF)

 ..1. Size:230K  samsung
 sgw13n60uf.pdf pdf_icon

SGW13N60UF

N-CHANNEL IGBT SGW13N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

 0.1. Size:274K  samsung
 sgw13n60ufd.pdf pdf_icon

SGW13N60UF

N-CHANNEL IGBT SGW13N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 37nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharac

Datasheet: SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , GT30F125 , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA .

History: STGWA40N120KD | FGD3245G2-F085 | MIXA20WB1200TMI | IXGA24N120C3 | TGPF15N60FDR | OST60N65HMF | BSM50GAL100D

Keywords - SGW13N60UF transistor datasheet

 SGW13N60UF cross reference
 SGW13N60UF equivalent finder
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