All IGBT. SGW6N60UFD Datasheet

 

SGW6N60UFD Datasheet and Replacement


   Type Designator: SGW6N60UFD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Package: TO263
 

 SGW6N60UFD substitution

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SGW6N60UFD Datasheet (PDF)

 ..1. Size:268K  samsung
 sgw6n60ufd.pdf pdf_icon

SGW6N60UFD

N-CHANNEL IGBT SGW6N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 35nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

 5.1. Size:219K  samsung
 sgw6n60uf.pdf pdf_icon

SGW6N60UFD

N-CHANNEL IGBT SGW6N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageVG

Datasheet: SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , TGPF30N43P , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D .

History: IRG4BC30KD | IXGH50N60B2 | BSM100GB170DN2 | APT40GT60BRG | IXGT50N60B | SKM200GB174D | 2MBI200NT-120-02

Keywords - SGW6N60UFD transistor datasheet

 SGW6N60UFD cross reference
 SGW6N60UFD equivalent finder
 SGW6N60UFD lookup
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 SGW6N60UFD replacement

 

 
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