SKM100GAX173D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM100GAX173D Specs and Replacement

Type Designator: SKM100GAX173D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 1000 pF

Package: MODULE

SKM100GAX173D Substitution

- IGBT ⓘ Cross-Reference Search

SKM100GAX173D datasheet

..1. Size:778K semikron
skm100gax173d skm100gay173d.pdf pdf_icon

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 100 GAX 173 D 6) IC Tcase = 25/80 C 110 / 75 A SKM 100 GAY 173 D 6) ICM Tcase = 25/80 C; tp = 1 ms 220 / 150 A VGES 20 V Ptot per IGBT/Diode, Tcase = 25 C 625 / 310 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 04... See More ⇒

6.1. Size:564K semikron
skm100gar123d.pdf pdf_icon

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6.2. Size:498K semikron
skm100gal12t4.pdf pdf_icon

SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 160 A Tj = 175 C Tc =80 C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GAL12T... See More ⇒

6.3. Size:554K semikron
skm100gal123d.pdf pdf_icon