SKM100GB173D PDF and Equivalents Search

 

SKM100GB173D Specs and Replacement

Type Designator: SKM100GB173D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 110 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 1000 pF

Package: MODULE

 SKM100GB173D Substitution

- IGBT ⓘ Cross-Reference Search

 

SKM100GB173D datasheet

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SKM100GB173D

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SKM100GB173D

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 5.1. Size:253K  semikron
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SKM100GB173D

SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 159 A Tj = 175 C Tc =80 C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12V Tc =80 C 91 A IFnom 1... See More ⇒

 5.2. Size:541K  semikron
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SKM100GB173D

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Specs: HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , RJH60F5DPQ-A0 , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D .

History: NGD18N45CLBT4G | SGP13N60UF

Keywords - SKM100GB173D transistor spec

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