All IGBT. SKM100GB173D Datasheet

 

SKM100GB173D Datasheet and Replacement


   Type Designator: SKM100GB173D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 1000 pF
   Package: MODULE
 

 SKM100GB173D substitution

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SKM100GB173D Datasheet (PDF)

 ..1. Size:556K  semikron
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SKM100GB173D

 4.1. Size:788K  semikron
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SKM100GB173D

 5.1. Size:253K  semikron
 skm100gb12v.pdf pdf_icon

SKM100GB173D

SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1

 5.2. Size:541K  semikron
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SKM100GB173D

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Datasheet: HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , GT30J122 , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D .

Keywords - SKM100GB173D transistor datasheet

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