SKM100GB173D Datasheet and Replacement
Type Designator: SKM100GB173D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 110 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE
- IGBT Cross-Reference
SKM100GB173D Datasheet (PDF)
skm100gb12v.pdf
SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1
Datasheet: HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , FGH75T65UPD , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D .
History: OM6520SC | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | MITB15WB1200TMH | TT040K120EQ | 1MB08D-120
Keywords - SKM100GB173D transistor datasheet
SKM100GB173D cross reference
SKM100GB173D equivalent finder
SKM100GB173D lookup
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SKM100GB173D replacement
History: OM6520SC | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | MITB15WB1200TMH | TT040K120EQ | 1MB08D-120
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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