SKM145GAL063DN Specs and Replacement
Type Designator: SKM145GAL063DN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE SKM145GAL063DN Substitution - IGBT ⓘ Cross-Reference Search
SKM145GAL063DN datasheet
Specs: SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SGT40N60FD2PT , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , SKM145GB123D .
History: SGW6N60UF | VS-GB90DA60U
Keywords - SKM145GAL063DN transistor spec
SKM145GAL063DN cross reference
SKM145GAL063DN equivalent finder
SKM145GAL063DN lookup
SKM145GAL063DN substitution
SKM145GAL063DN replacement
History: SGW6N60UF | VS-GB90DA60U
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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