IGC114T170S8RM PDF and Equivalents Search

 

IGC114T170S8RM Specs and Replacement

Type Designator: IGC114T170S8RM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

Package: CHIP

 IGC114T170S8RM Substitution

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IGC114T170S8RM datasheet

 ..1. Size:247K  infineon
igc114t170s8rm.pdf pdf_icon

IGC114T170S8RM

IGC114T170S8RM IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mechanical Parameters ... See More ⇒

 1.1. Size:126K  infineon
igc114t170s8rh.pdf pdf_icon

IGC114T170S8RM

IGC114T170S8RH IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mech... See More ⇒

 9.1. Size:75K  infineon
sigc11t60snc.pdf pdf_icon

IGC114T170S8RM

SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT Modules positive temperature coefficient easy paralleling Applications G E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155- SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2 ... See More ⇒

 9.2. Size:72K  infineon
igc11t120t6l.pdf pdf_icon

IGC114T170S8RM

IGC11T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P... See More ⇒

Specs: IGC100T65T8RM, IGC109T120T6RH, IGC109T120T6RL, IGC109T120T6RM, IGC10R60D, IGC10R60DE, IGC10T65QE, IGC114T170S8RH, CRG40T65AK5HD, IGC11T120T6L, APT33GF120LRD, IGC189T120T8RL, IGC189T120T6RL, IGC168T170S8RM, APT50GF120HR, IGC168T170S8RH, APT50GF120LR

Keywords - IGC114T170S8RM transistor spec

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