IGC114T170S8RM - аналоги и описание IGBT

 

IGC114T170S8RM - аналоги, основные параметры, даташиты

Наименование: IGC114T170S8RM

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1700 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃

Тип корпуса: CHIP

 Аналог (замена) для IGC114T170S8RM

- подбор ⓘ IGBT транзистора по параметрам

 

IGC114T170S8RM даташит

 ..1. Size:247K  infineon
igc114t170s8rm.pdfpdf_icon

IGC114T170S8RM

IGC114T170S8RM IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mechanical Parameters

 1.1. Size:126K  infineon
igc114t170s8rh.pdfpdf_icon

IGC114T170S8RM

IGC114T170S8RH IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mech

 9.1. Size:75K  infineon
sigc11t60snc.pdfpdf_icon

IGC114T170S8RM

SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip IGBT Modules positive temperature coefficient easy paralleling Applications G E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155- SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER mm2

 9.2. Size:72K  infineon
igc11t120t6l.pdfpdf_icon

IGC114T170S8RM

IGC11T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P

Другие IGBT... IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IGC109T120T6RM , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , CRG40T65AK5HD , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH , APT50GF120LR .

History: APT33GF120LRD

 

 

 

 

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