SKM145GB123D PDF and Equivalents Search

 

SKM145GB123D Specs and Replacement

Type Designator: SKM145GB123D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 145 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 1000 pF

Package: MODULE

 SKM145GB123D Substitution

- IGBT ⓘ Cross-Reference Search

 

SKM145GB123D datasheet

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SKM145GB123D

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SKM145GB123D

SEMITRANS M Absolute Maximum Ratings Values Low Loss IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 145 GB 124 D IC Tcase = 25/70 C 190 / 145 A ICM Tcase = 25/70 C; tp = 1 ms 380 / 290 A VGES 20 V Ptot per IGBT, Tcase = 25 C 800 W Tj, (Tstg) 40 ... + 150 (125) C Visol AC, 1 min. 2 500 V humidity DIN 40040 Class F climate DIN IEC ... See More ⇒

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SKM145GB123D

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Specs: SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , IXRH40N120 , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D , SKM150GB123D , SKM150GB124D .

History: IGP40N65F5 | MMIX1G120N120A3V1 | IRG8P40N120KD

Keywords - SKM145GB123D transistor spec

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