SKM145GB123D Datasheet and Replacement
Type Designator: SKM145GB123D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 145 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE
- IGBT Cross-Reference
SKM145GB123D Datasheet (PDF)
skm145gb124d.pdf

SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 145 GB 124 DIC Tcase = 25/70 C 190 / 145 AICM Tcase = 25/70 C; tp = 1 ms 380 / 290 AVGES 20 VPtot per IGBT, Tcase = 25 C 800 WTj, (Tstg) 40 ... + 150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40040 Class Fclimate DIN IEC
Datasheet: SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , NCE80TD65BT , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D , SKM150GB123D , SKM150GB124D .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - SKM145GB123D transistor datasheet
SKM145GB123D cross reference
SKM145GB123D equivalent finder
SKM145GB123D lookup
SKM145GB123D substitution
SKM145GB123D replacement
History: MG25Q6ES51 | 7MBR75U2B060



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