SKM145GB174DN Specs and Replacement
Type Designator: SKM145GB174DN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 860 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 1100 pF
Package: MODULE SKM145GB174DN Substitution - IGBT ⓘ Cross-Reference Search
SKM145GB174DN datasheet
Specs: SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN , IRG4PF50W , SKM150GAL123D , SKM150GAR123D , SKM150GB063D , SKM150GB123D , SKM150GB124D , SKM150GB125D , SKM150GB173D , SKM150GB174D .
Keywords - SKM145GB174DN transistor spec
SKM145GB174DN cross reference
SKM145GB174DN equivalent finder
SKM145GB174DN lookup
SKM145GB174DN substitution
SKM145GB174DN replacement
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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