SKM195GAL124DN Datasheet and Replacement
Type Designator: SKM195GAL124DN
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 260 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 1600 pF
Package: MODULE
SKM195GAL124DN substitution
SKM195GAL124DN Datasheet (PDF)
skm195gal062d skm195gb062d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 195 GB 062 DIC Tcase = 25/60 C 230 / 195 ASKM 195 GAL 062 D 6)ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 AVGES 20 VPtot per IGBT, Tcase = 25 C 700 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40 040 Class Fcl
Datasheet: SKM150GB063D , SKM150GB123D , SKM150GB124D , SKM150GB125D , SKM150GB173D , SKM150GB174D , SKM195GAL062D , SKM195GAL063DN , KGF75N65KDF , SKM195GAR063DN , SKM195GB062D , SKM195GB063DN , SKM195GB124DN , SKM200GA123D , SKM200GAL123D , SKM200GAL173D , SKM200GAR123D .
History: SKM150GAL12V
Keywords - SKM195GAL124DN transistor datasheet
SKM195GAL124DN cross reference
SKM195GAL124DN equivalent finder
SKM195GAL124DN lookup
SKM195GAL124DN substitution
SKM195GAL124DN replacement
History: SKM150GAL12V
LIST
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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