SKM195GAL124DN Specs and Replacement
Type Designator: SKM195GAL124DN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 260 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 1600 pF
Package: MODULE SKM195GAL124DN Substitution - IGBTⓘ Cross-Reference Search
SKM195GAL124DN datasheet
skm195gal062d skm195gb062d.pdf
SEMITRANS M Absolute Maximum Ratings Values PT-IGBT Modules Symbol Conditions 1) Units VCES 600 V VCGR RGE = 20 k 600 V SKM 195 GB 062 D IC Tcase = 25/60 C 230 / 195 A SKM 195 GAL 062 D 6) ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 A VGES 20 V Ptot per IGBT, Tcase = 25 C 700 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2 500 V humidity DIN 40 040 Class F cl... See More ⇒
Specs: SKM150GB063D, SKM150GB123D, SKM150GB124D, SKM150GB125D, SKM150GB173D, SKM150GB174D, SKM195GAL062D, SKM195GAL063DN, CRG40T65AK5HD, SKM195GAR063DN, SKM195GB062D, SKM195GB063DN, SKM195GB124DN, SKM200GA123D, SKM200GAL123D, SKM200GAL173D, SKM200GAR123D
Keywords - SKM195GAL124DN transistor spec
SKM195GAL124DN cross reference
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History: MGP7N60E | AOK40B65HQ2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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