IRFL214 MOSFET Datasheet: N-Ch, 250V, 0.79A. Full specification with pinout and replacement list

IRFL214 Specs and Replacement

Type Designator: IRFL214

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.79 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 42 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT223

IRFL214 substitution

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IRFL214 datasheet

..1. Size:228K international rectifier
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PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 250V Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching RDS(on) = 2.0 Ease of Paralleling G Simple Drive Requirements Lead-Free ID = 0.79A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast sw... See More ⇒

..2. Size:174K international rectifier
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..3. Size:925K vishay
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IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition RDS(on) ( )VGS = 10 V 2.0 Surface Mount Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Parallelin... See More ⇒

8.1. Size:182K international rectifier
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