BUK9506-75B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9506-75B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 95
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
TO220AB
BUK9506-75B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9506-75B
Datasheet (PDF)
..1. Size:333K philips
buk9506-75b buk9606-75b.pdf
BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r
6.1. Size:332K philips
buk9506-55a.pdf
BUK9506-55A; BUK9606-55A;BUK9E06-55ATrenchMOS logic level FETRev. 03 23 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);BUK9E06-55A in SOT226 (I2-PAK).
6.2. Size:48K philips
buk9506-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist
7.1. Size:66K philips
buk9506 buk9606-55a 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo
Datasheet: BUK9240-100A
, BUK9245-55A
, BUK9275-100A
, BUK9277-55A
, BUK9504-40A
, BUK9505-30A
, BUK9506-40B
, BUK9506-55B
, 50N06
, BUK9507-30B
, BUK9508-55B
, BUK9509-40B
, BUK9509-75A
, BUK9510-100B
, BUK9510-55A
, BUK9511-55A
, BUK9512-55B
.