BUK9508-55B MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9508-55B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 203 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 45 nC
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220AB
BUK9508-55B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9508-55B Datasheet (PDF)
4.1. buk9508-55a buk9508-55a buk9608-55a.pdf 
Size:328K _philips
BUK95/9608-55ATrenchMOS logic level FETRev. 03 6 May 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9508-55A in SOT78 (TO-220AB)BUK9608-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 compliant 1
4.2. buk9508-55 2.pdf Size:52K _philips
Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist
7.1. buk9508 buk9608-55a 2.pdf Size:78K _philips
Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
