BUK9508-55B Datasheet and Replacement
Type Designator: BUK9508-55B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 203 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220AB
BUK9508-55B substitution
BUK9508-55B Datasheet (PDF)
buk9508-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist
buk9508-55a buk9508-55a buk9608-55a.pdf

BUK95/9608-55ATrenchMOS logic level FETRev. 03 6 May 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9508-55A in SOT78 (TO-220AB)BUK9608-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 compliant 1
buk9508 buk9608-55a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo
Datasheet: BUK9275-100A , BUK9277-55A , BUK9504-40A , BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , BUK9507-30B , IRFZ44 , BUK9509-40B , BUK9509-75A , BUK9510-100B , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A , BUK95150-55A .
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