All MOSFET. BUK9510-100B Datasheet

 

BUK9510-100B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9510-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 15 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 75 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 86 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
   Package: TO220AB

 BUK9510-100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9510-100B Datasheet (PDF)

 ..1. Size:342K  philips
buk9510-100b buk9610-100b.pdf

BUK9510-100B BUK9510-100B

BUK95/9610-100BTrenchMOS logic level FETRev. 02 8 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9510-100B in SOT78 (TO-220AB)BUK9610-100B in SOT404 (D2-PAK).1.2 Features Very low on-state r

 6.1. Size:327K  philips
buk9510-55a buk9610-55a.pdf

BUK9510-100B BUK9510-100B

BUK9510-55A; BUK9610-55ATrenchMOS logic level FETRev. 01 20 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9510-55A in SOT78 (TO-220AB)2BUK9610-55A in SOT404 (D -PAK).2. Features TrenchMOS technology

 6.2. Size:49K  philips
buk9510-30 1.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9510-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

 8.1. Size:68K  philips
buk95180-100a buk96180-100a.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec

 8.2. Size:102K  philips
buk9516-55a buk9616-55a buk9516.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 66 Atrench technolo

 8.3. Size:71K  philips
buk95150-55a buk96150-55a buk96150-55a.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 13 Atrench techno

 8.4. Size:333K  philips
buk9518-55a buk9618-55a.pdf

BUK9510-100B BUK9510-100B

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q

 8.5. Size:47K  philips
buk9514-30 1.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9514-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 69 Alow on-state resist

 8.6. Size:47K  philips
buk9518-30 1.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist

 8.7. Size:300K  philips
buk9516-75b buk9616-75b.pdf

BUK9510-100B BUK9510-100B

BUK95/9616-75BTrenchMOS logic level FETRev. 01 23 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9516-75B in SOT78 (TO-220AB)BUK9616-75B in SOT404 (D2-PAK).1.2 Features Very low on-state

 8.8. Size:70K  philips
buk9515-100a buk9615-100a.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100ALogic level FET BUK9615-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench techno

 8.9. Size:52K  philips
buk9518-55.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist

 8.10. Size:322K  philips
buk9514-55a buk9614-55a.pdf

BUK9510-100B BUK9510-100B

BUK9514-55A; BUK9614-55ATrenchMOS logic level FETRev. 01 7 Feb 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9514-55A in SOT78 (TO-220AB)BUK9614-55A in SOT404 (D 2-PAK).2. Features TrenchMOS technology

 8.11. Size:53K  philips
buk9514-55 2.pdf

BUK9510-100B BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9514-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 68 Alow on-state resist

 8.12. Size:341K  philips
buk9511-55a buk9611-55a.pdf

BUK9510-100B BUK9510-100B

BUK9511-55A; BUK9611-55ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9511-55A in SOT78 (TO-220AB)BUK9611-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

 8.13. Size:218K  nxp
buk951r6-30e.pdf

BUK9510-100B BUK9510-100B

BUK951R6-30EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.14. Size:212K  nxp
buk9515-60e.pdf

BUK9510-100B BUK9510-100B

BUK9515-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.15. Size:225K  inchange semiconductor
buk9518-55a.pdf

BUK9510-100B BUK9510-100B

isc N-Channel MOSFET Transistor BUK9518-55AFEATURESStatic drain-source on-resistance:RDS(on) 16mFully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Datasheet: BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , BUK9507-30B , BUK9508-55B , BUK9509-40B , BUK9509-75A , P55NF06 , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A , BUK95150-55A , BUK9515-100A , BUK9516-55A , BUK9516-75B .

 

 
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