All MOSFET. BUK9510-100B Datasheet

 

BUK9510-100B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9510-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: TO220AB
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BUK9510-100B Datasheet (PDF)

 ..1. Size:342K  philips
buk9510-100b buk9610-100b.pdf pdf_icon

BUK9510-100B
BUK9510-100B

BUK95/9610-100BTrenchMOS logic level FETRev. 02 8 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9510-100B in SOT78 (TO-220AB)BUK9610-100B in SOT404 (D2-PAK).1.2 Features Very low on-state r

 6.1. Size:327K  philips
buk9510-55a buk9610-55a.pdf pdf_icon

BUK9510-100B
BUK9510-100B

BUK9510-55A; BUK9610-55ATrenchMOS logic level FETRev. 01 20 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9510-55A in SOT78 (TO-220AB)2BUK9610-55A in SOT404 (D -PAK).2. Features TrenchMOS technology

 6.2. Size:49K  philips
buk9510-30 1.pdf pdf_icon

BUK9510-100B
BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK9510-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

 8.1. Size:68K  philips
buk95180-100a buk96180-100a.pdf pdf_icon

BUK9510-100B
BUK9510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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