BUK9514-55A Datasheet and Replacement

BUK9514-55A; BUK9614-55ATrenchMOS logic level FETRev. 01 7 Feb 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9514-55A in SOT78 (TO-220AB)BUK9614-55A in SOT404 (D 2-PAK).2. Features TrenchMOS technology

Philips Semiconductors Product specification TrenchMOS transistor BUK9514-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 68 Alow on-state resist

Philips Semiconductors Product specification TrenchMOS transistor BUK9514-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 69 Alow on-state resist

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec

Philips Semiconductors Product specification TrenchMOS transistor BUK9516-55A Logic level FET BUK9616-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 66 Atrench technolo

Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 13 Atrench techno

BUK9510-55A; BUK9610-55ATrenchMOS logic level FETRev. 01 20 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9510-55A in SOT78 (TO-220AB)2BUK9610-55A in SOT404 (D -PAK).2. Features TrenchMOS technology

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist

BUK95/9610-100BTrenchMOS logic level FETRev. 02 8 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9510-100B in SOT78 (TO-220AB)BUK9610-100B in SOT404 (D2-PAK).1.2 Features Very low on-state r

BUK95/9616-75BTrenchMOS logic level FETRev. 01 23 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9516-75B in SOT78 (TO-220AB)BUK9616-75B in SOT404 (D2-PAK).1.2 Features Very low on-state

Philips Semiconductors Product specification TrenchMOS transistor BUK9515-100ALogic level FET BUK9615-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench techno

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist

Philips Semiconductors Product specification TrenchMOS transistor BUK9510-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 75 Alow on-state resist

BUK9511-55A; BUK9611-55ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9511-55A in SOT78 (TO-220AB)BUK9611-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

BUK951R6-30EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

BUK9515-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

isc N-Channel MOSFET Transistor BUK9518-55AFEATURESStatic drain-source on-resistance:RDS(on) 16mFully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME